PART |
Description |
Maker |
HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240 256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240 64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc. XILINX INC
|
NT5DS16M16CS NT5DS16M16CS-5T NT5DS16M16CS-6K NT5DS |
256Mb DDR Synchronous DRAM
|
NanoAmp Solutions, Inc.
|
EM6A8160TSA EM6A8160TSA-5G |
4M x 16 DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
EM6A9320BIA |
4M x 32 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
EM68916DVAA-6H EM68916DVAA-75H |
8M x 16 Mobile DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
EM6AA160TSA EM6AA160TSA-4G EM6AA160TSA-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
EM68B16DVAA-6H EM68B16DVAA-75H EM68B16DVAA |
32M x 16 Mobile DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
W947D2HBJX5I W947D2HBJX6E W947D2HBJX5E W947D2HBJX6 |
128Mb Mobile LPDDR 4M X 32 DDR DRAM, 5 ns, PBGA90 8M X 16 DDR DRAM, 5 ns, PBGA60
|
Winbond WINBOND ELECTRONICS CORP
|
V59C1256804QALP19E V59C1256808QALP19E V59C1G01164Q |
32M X 8 DDR DRAM, BGA68 64M X 16 DDR DRAM, BGA92
|
PROMOS TECHNOLOGIES INC
|
KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61 16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|